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Stage Master 2: RF characterization of 28nm-FDSOI MOSFETs for cryogenic operation H/F


Détail de l'offre

Informations générales

Entité de rattachement

Le Commissariat à l'énergie atomique et aux énergies alternatives (CEA) est un organisme public de recherche.

Acteur majeur de la recherche, du développement et de l'innovation, le CEA intervient dans le cadre de ses quatre missions :
. la défense et la sécurité
. l'énergie nucléaire (fission et fusion)
. la recherche technologique pour l'industrie
. la recherche fondamentale (sciences de la matière et sciences de la vie).

Avec ses 16000 salariés -techniciens, ingénieurs, chercheurs, et personnel en soutien à la recherche- le CEA participe à de nombreux projets de collaboration aux côtés de ses partenaires académiques et industriels.  

Référence

2020-14140  

Description du poste

Domaine

Technologies micro et nano

Contrat

Stage

Intitulé de l'offre

Stage Master 2: RF characterization of 28nm-FDSOI MOSFETs for cryogenic operation H/F

Sujet de stage

RF setup automation for passive and active components electrical characterization on 28nm-FDSOI technology at cryogenic temperatures

Durée du contrat (en mois)

6

Description de l'offre

Internship framework. Fully-depleted Silicon-On-Insulator (FDSOI) technology is one of the main challenger for the technology downscaling thanks to its high performances such as high-speed, low power, as well as high RF figures of merit [1]. Besides, FDSOI is a valuable solution for circuits working at cryogenic temperatures such as readout and control electronics for quantum computing or deep-space applications [2,3]. For efficient and reliable circuit designs it is essential to embed digital, analog and RF models in a process design kit in order to predict the MOSFETs performances and power dissipation at cryogenic temperatures. The internship goal will be to work on the setup for RF measurements down to 4.2K, and the corresponding RF characterization and modelling of 28nm-FDSOI technology for cryogenic operation.

 

Work description.The internship will be divided in three parts:

  • The first part will be the installation and automation of a cryogenic setup specially dedicated for RF characterization down to 4.2K. The intern will deal with mechanical challenges for probing at high-frequency as well as the de-embedding at cryogenic temperatures.
  • Next, during the second part of the internship, the candidate will be responsible of electrical and RF characterization of MOS transistors as well as passive components (transmission lines, inductances, etc.) integrated on 28nm-FDSOI technology, facing equivalent model extraction at different cryogenic temperatures.
  • Finally, modelling and understanding of the device will be improved with TCAD tools.

A PhD is also proposed on the topic for a beginning in October 2021.

References

[1] "NanoElectronics Roadmap for Europe", https://www.nereid-h2020.eu/roadmap

[2] L. Nyssens et al., “28-nm FD-SOI CMOS RF Figures of Merit down to 4.2 K,” IEEE J. Electron Devices Soc., vol. 8, no. June, pp. 646–654, 2020, doi: 10.1109/JEDS.2020.3002201.

[3] E. Charbon, “Cryo-CMOS Electronics for Quantum Computing Applications,” in Proceedings of 49th European Solid-State Device Research Conference (ESSDERC), 2019, pp. 1–6, doi: 10.1109/ESSDERC.2019.8901812.

 

Candidate's profile. Student from Master in Engineering science/Microelectronics, with skills in Radio-Frequency electronics, and/or Semiconductor physics. Experimental research performed at undergraduate level will be beneficial.

Localisation du poste

Site

Grenoble

Localisation du poste

France

Ville

Grenoble

Critères candidat

Langues

Anglais (Intermédiaire)

Diplôme préparé

Bac+5 - Master 2

Formation recommandée

Microélectronique, Physique des dispositifs electroniques

Possibilité de poursuite en thèse

Oui