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Development of an advanced optimization platform for RF and THz power amplifiers H/F


Vacancy details

General information

Organisation

The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France
  

Reference

2022-23906  

Position description

Category

Electromagnetism, electrical engineering

Contract

Internship

Job title

Development of an advanced optimization platform for RF and THz power amplifiers H/F

Subject

The goal of this internship is to develop an intuitive platform that allows evaluating, developing, optimizing, and comparing RF power amplifiers. The developed platform will allow the designers to accelerate the design cycle of high-efficiency load-modulated PA architectures.

Contract duration (months)

6

Job description

The goal of this internship is to develop an intuitive platform that allows evaluating, developing, optimizing, and comparing RF power amplifiers. The platform will combine Matlab analytic solver capabilities and the nodal analysis theory to derive the analytical design equations. The analytical design equations are then used to automate the PA design procedure including transistor sizing, optimal source and load impedance definition, performance extraction under swept conditions (Supply, operating frequency, class-of-operation…). The large signal simulations, performed in ADS, will use an internally developed design-oriented empirical transistor to accelerate the optimization time while achieving accurate results. The tool will support various transistor topologies (common source, common gate, stacked transistors) and will support both MOS and HBT transistors. The final objective of the internship is to demonstrate a high-efficiency load-modulated PA architecture based on the developed platform.

Applicant Profile

You are working toward a master of research or engineering degree in electrical engineering with specialization in radio frequency, telecommunication, or analog microelectronics.

 

Required Technical Skills:

  • Good understanding of RF power amplifier design (Class of operation, architectures…)
  • Strong knowledge in circuit analysis techniques (KCL, KVL, Nodal Analysis, Loop or Mesh Analysis, Superposition, Thévenin's and Norton's Theorems …)
  • Strong knowledge in RF design (impedance matching, passive devices, linearity, signal modulation)
  • Good understanding of semiconductor process such as CMOS, SOI, BiCMOS, knowledge of III-V technologies is a plus.
  • Strong analytical problem-solving skills and good understanding of matrix algebra
  • Familiar with RF design tools (ADS, Cadence) and programming platform (Matlab, python…)
  • Pro-active attitude, good communication, documentation, presentation skills

Position location

Site

Grenoble

Job location

France, Auvergne-Rhône-Alpes, Isère (38)

Location

  Grenoble

Candidate criteria

Languages

  • French (Fluent)
  • English (Fluent)

Recommended training

Radio Frequency circuits design / Conception de circuits radiofréquences

PhD opportunity

Oui