The goal of this internship is to develop an intuitive platform that allows evaluating, developing, optimizing, and comparing RF power amplifiers. The platform will combine Matlab analytic solver capabilities and the nodal analysis theory to derive the analytical design equations. The analytical design equations are then used to automate the PA design procedure including transistor sizing, optimal source and load impedance definition, performance extraction under swept conditions (Supply, operating frequency, class-of-operation…). The large signal simulations, performed in ADS, will use an internally developed design-oriented empirical transistor to accelerate the optimization time while achieving accurate results. The tool will support various transistor topologies (common source, common gate, stacked transistors) and will support both MOS and HBT transistors. The final objective of the internship is to demonstrate a high-efficiency load-modulated PA architecture based on the developed platform.

You are working toward a master of research or engineering degree in electrical engineering with specialization in radio frequency, telecommunication, or analog microelectronics.

Required Technical Skills:

• Good understanding of RF power amplifier design (Class of operation, architectures…)
• Strong knowledge in circuit analysis techniques (KCL, KVL, Nodal Analysis, Loop or Mesh Analysis, Superposition, Thévenin's and Norton's Theorems …)
• Strong knowledge in RF design (impedance matching, passive devices, linearity, signal modulation)
• Good understanding of semiconductor process such as CMOS, SOI, BiCMOS, knowledge of III-V technologies is a plus.
• Strong analytical problem-solving skills and good understanding of matrix algebra
• Familiar with RF design tools (ADS, Cadence) and programming platform (Matlab, python…)
• Pro-active attitude, good communication, documentation, presentation skills