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Development of an advanced optimization platform for RF and THz power transistors H/F

Vacancy details

General information


The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France



Position description


Electromagnetism, electrical engineering



Job title

Development of an advanced optimization platform for RF and THz power transistors H/F


In order to evaluate the RF performances of the RF and THZ high-voltage devices under different operation conditions, LETI develops an internal platform (tool) to perform fast and accurate PA design and device evaluation based on an internally developed design-oriented empirical large signal model.

Contract duration (months)


Job description

The goal of this internship is to develop an intuitive platform that allows evaluating, developing, optimizing, and comparing RF power transistors. The platform will combine Matlab analytic solver capabilities and the nodal analysis theory to derive the analytical design equations. The analytical design equations are then used to automate the PA design procedure including transistor sizing, optimal source and load impedance definition, performance extraction under swept conditions (Supply, operating frequency, class-of-operation…). The large signal simulations, performed in ADS, will use an internally developed design-oriented empirical transistor to accelerate the optimization time while achieving accurate results. The tool will support various transistor topologies (common source, common gate, stacked transistors) and will support both MOS and HBT transistors. By comparing the transistor topologies for different technology parameters, frequency bands and power levels, the student will develop a guideline to allow the designers and process engineers to select the appropriate device topology and technology based on the targeted application.

Methods / Means

Advanced Design System, Cadence, Matlab, Python

Applicant Profile

You are working toward a master of research or engineering degree in electrical engineering with specialization in radio frequency, telecommunication, or analog microelectronics. To achieve the internship goals, you are required to have the following : 

Good understanding of RF power amplifier design (Class of operation, architectures…)
Strong knowledge in RF design (impedance matching, passive devices, linearity, signal modulation)
Good understanding of semiconductor process such as CMOS, SOI, BiCMOS, knowledge of III-V technologies is a plus.
Strong analytical problem-solving skills and good understanding of matrix algebra
Familiar with RF design tools (ADS, Cadence) and programming platform (Matlab, python…)
Pro-active attitude, good communication, documentation, presentation skills

Position location





Candidate criteria

Prepared diploma

Bac+5 - Diplôme École d'ingénieurs

Recommended training

Conception des circuits analogiques et radiofréquences

PhD opportunity