Informations générales
Entité de rattachement
Le Commissariat à l'énergie atomique et aux énergies alternatives (CEA) est un organisme public de recherche.
Acteur majeur de la recherche, du développement et de l'innovation, le CEA intervient dans le cadre de ses quatre missions :
. la défense et la sécurité
. l'énergie nucléaire (fission et fusion)
. la recherche technologique pour l'industrie
. la recherche fondamentale (sciences de la matière et sciences de la vie).
Avec ses 16000 salariés -techniciens, ingénieurs, chercheurs, et personnel en soutien à la recherche- le CEA participe à de nombreux projets de collaboration aux côtés de ses partenaires académiques et industriels.
Référence
2023-25714
Description de l'unité
A Grenoble, au centre des Alpes, le LETI est un institut de recherche appliquée en micro et nano technologies, technologies de l'information et de la santé. Interface privilégiée du monde industriel et de la recherche académique, il assure chaque année le développement et le transfert de technologies innovantes dans des secteurs variés via des programmes de recherche utilisant nos plateformes technologiques.
Description du poste
Domaine
Technologies micro et nano
Contrat
Post-doctorat
Intitulé de l'offre
POST-DOC - GaN layer transfer for vertical Power Electronics Devices H/F
Sujet de stage
GaN layer transfer for vertical Power Electronics Devices
Durée du contrat (en mois)
12 or 24
Description de l'offre
There is a strong motivation to develop GaN-based vertical Power Electronics Devices as they may allow to have a smaller footprint by one order of magnitude with respect to current SiC devices. This is of high interest for power conversion applications such as electric-vehicles, photovoltaics or UPS.
Vertical GaN power devices have been developed on GaN substrates which are at the moment very expensive. GaN layers can also be grown on foreign substrates (such as Si or Sapphire). Pseudo-vertical structures have been proposed in order to contact the bottom electrode as it must be accessed on its side due to the presence of the foreign substrate. The drawback is in this case an increase of the device footprint. In order to overcome this limitation, it is proposed to use here layer transfer technologies, based on LETI’s know-how, to access the bottom electrode contact.
The work that is proposed will first consist in evaluating the properties of the substrates with GaN epitaxial layers, followed by an assessment of the different layer bonding options and the establishment of full process flow including suitable carrier wafer choice and substrate removal.
These process steps will be key in the development of a full vertical power device fabrication flow.
This work is financed within the electronics theme of the French PEPR (Programmes et équipements prioritaires de recherche) and of the “Programme d’investissements d’avenir du plan France Relance”. It addresses a research topic that is identified as key for the development of power electronics converters for industrial and consumer applications. It will be lead at CEA-LETI within the Minatec Campus in Grenoble.
Profil du candidat
You have a PhD in microelectronics with GaN device integration knowledge.
You appreciate to work within a multidisciplinary team.
You have worked in a clean room environment.
You have a strong background on material characterization techniques (ellipsometric spectroscopy, Raman, XRD, AFM, SIMS, TEM, SEM…).
You are passionate about understanding complex problems.
You propose hypothesis to explain the experimental results. Not only you describe the experimental results, but you link them with the theory.
You enjoy communicating your research results to the team or in conferences.
Localisation du poste
Site
Grenoble
Localisation du poste
France, Auvergne-Rhône-Alpes, Isère (38)
Ville
Grenoble
Critères candidat
Possibilité de poursuite en thèse
Non
Demandeur
Disponibilité du poste
02/02/2023
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