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Scaling evaluation of ultra-low power HfO2-based ferroelectric memories towards 28nm node H/F


Vacancy details

General information

Organisation

The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France
  

Reference

2020-14125  

Position description

Category

Micro and nano technologies

Contract

Internship

Job title

Scaling evaluation of ultra-low power HfO2-based ferroelectric memories towards 28nm node H/F

Subject

The recent discovery of ferroelectricity in HfO2 thin films generates a strong interest in integrating this CMOS-compatible and scalable material in ultra-low power ferroelectric memories and neuromorphic circuits. Within the last 6 months excellent results were reported on HfO2-based ferroelectric capacitors integrated in the Back-End Of Line of 130nm CMOS, confirming their potential for non-volatile memory applications. In this context, HfO2-based ferroelectric capacitors will be fabricated and electrically characterized to assess their potential to be scaled towards 28nm node.

Contract duration (months)

6

Job description

The candidate will perform advanced electrical characterization on state-of-the-art TiN/doped HfO2/TiN single capacitors with different areas, as well as 16kbit FeRAM arrays. Remanent polarization, coercive field, and imprint values will be extracted as a function of cycling (endurance) and temperature (data retention) for various pulse voltages/durations. Based on array characterization where large statistics is available, the physical mechanisms responsible for the reliability issues will be investigated. The results will be used to optimize the capacitor electrical properties to further design low voltage, ultra fast, scaled FeRAM memory arrays integrated within 28nm FDSOI node.

Applicant Profile

Master 2 student

Position localisation

Site

Grenoble

Job location

France, Auvergne-Rhône-Alpes, Isère (38)

Location

Grenoble

Candidate criteria

Prepared diploma

Bac+5 - Master 2

Recommended training

Ecole d'Ingénieur dans le domaine de la microélectronique / physique des semiconducteurs

PhD opportunity

Oui