Post-Doctoral position

Vacancy details

General information

Organisation

The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France
  

Reference

2025-35552  

Position description

Category

Micro and nano technologies

Contract

Postdoc

Job title

Post-Doctoral position

Subject

Comparison of Diamond and vertical GaN to SiC and Si in power applications H/F

Contract duration (months)

24

Job description

Join CEA-Leti and take part in the development of the future technologies that will transform tomorrow’s power electronic systems. Work with multidisciplinary teams,from material engineering, device simulation, manufacturing and characterization to power system development.


This project involves studying the viability of emerging diamond and GaN-based vertical power device technologies. The candidate will have the ambitious task of assessing the extent to which these new technologies can deliver performance improvements compared with existing Si or SiC solutions, in one or more specific applications.


In particular, the project aims to:

 

  • Identify one or more applications in which vertical GaN and diamond technologies are likely to offer significant gains, taking into account the current and/or projected market for these applications.
  • Using TCAD and SPICE simulations, as well as experimental measurements from test devices, to compare the estimated performance of industrially ready diamond and GaN components, designed for these applications, with that of existing SiC and Si
    devices.
  • Propose a roadmap for the development of these technologies.

Why join our team? We can offer you :

  • Experience at the cutting edge of innovation, with strong potential for industrial development,
  • Training to reinforce your skills or acquire new ones,
  • A position in the heart of the Grenoble metropolitan area, easily accessible via the soft mobility encouraged by the CEA,
  • 85% contribution to public transport costs,
  • A recognized work-life balance,
  • A policy of diversity and inclusion,
  • Company restaurants,
  • An active CSE in terms of leisure and extra-professional activities,
  • A savings scheme matched by the CEA.

Methods / Means

TCAD Sentaurus, SPICE, electrical characterization

Applicant Profile

Candidates must have obtained a PhD in the field of semiconductors. Training or experience in large gap semiconductor physics and/or power electronics is required. Experience with TCAD simulation software and device electrical characterisation is recommended as well.

 

In line with CEA's commitment to integrating people with disabilities, this job is open to all. The CEA offers accommodations and/or organizational possibilities. Join us!

Position location

Site

Grenoble

Job location

France, Auvergne-Rhône-Alpes, Isère (38)

Location

  Grenoble

Candidate criteria

Prepared diploma

Bac+8 - Doctorat scientifique

Recommended training

PhD in the field of power devices and/or wide band gap materials

PhD opportunity

Non

Requester

Position start date

02/06/2025