General information
Organisation
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
The CEA is established in ten centers spread throughout France
Reference
2025-37706
Position description
Category
Micro and nano technologies
Contract
Internship
Job title
Innovative power device with 2D electron gas in Gallium oxide
Subject
In the context of the energy transition, wide-bandgap materials Ga₂O₃ (Gallium Oxide) is gaining increasing interest since it offers exceptional voltage withstand capability. However, it still suffers from limitations such as average electron mobility and low thermal conductivity. The integration of heterogeneous structures, notably thin layers of Ga₂O₃, AlGaO, and AlN on various substrates, could enable the formation of two-dimensional electron gases (2DEG), significantly improving carrier mobility compared to bulk Ga₂O₃ and, consequently, reducing energy losses during nominal operation.
Contract duration (months)
6
Job description
The main objective is to evaluate the growth of Ga₂O₃ layer stacks and associated materials for the formation of heterojunction structures based on a 2DEG channel. These layers will be implemented on various thermally efficient substrates as alternatives to Ga₂O₃ to improve the electro-thermal performance of innovative power components for energy applications up to 1700V.The internship will include:
1.Literature Review:
•Review of Ga₂O₃ growth techniques on different types of substrates (MBE, MOCVD, ALD, etc.)
•Analysis of compatible substrates (sapphire, SiC, AlN, etc.)
2.Experimental Exploration:
•Contribute to the definition of experimental process specifications for the growth of Ga₂O₃ and other materials on heterogeneous substrates
•Morphological characterization of the fabricated samples
•Monitoring the fabrication of electrical test structures
•Measurements and comparison of expected performance (carrier mobility, voltage withstand capability and critical fields, conduction resistance)
3.Techno-Economic Analysis:
•Benchmarking of vertical technologies (Ga₂O₃ bulk, GaN) vs. lateral technologies (GaN HEMT, lateral Ga₂O₃)
Comparative study in terms of performance, manufacturing costs, and integration into power architectures
Applicant Profile
Student in Master 2 or engineering school with a specialization in semiconductor physics or materials. Desired skills:
•Knowledge of semiconductor materials and power devices
•Interest in experimental research and modeling
•Ability to critically analyze and synthesize information
Note: candidates interested with a PhD will be considered in priority
Position location
Site
Grenoble
Job location
France, Auvergne-Rhône-Alpes, Isère (38)
Location
Grenoble
Candidate criteria
Languages
- English (Fluent)
- French (Fluent)
Prepared diploma
Bac+5 - Diplôme École d'ingénieurs
PhD opportunity
Oui
Requester
Position start date
01/01/2026