General information
Organisation
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
The CEA is established in ten centers spread throughout France
Reference
2025-37715
Description de l'unité
CEA is a major player in research, serving citizens, the economy, and the State.
It provides concrete solutions to their needs in four main areas: energy transition, digital transition, technologies for future medicine, and defense and security — all built on a foundation of fundamental research.
For over 75 years, CEA has been committed to supporting the scientific, technological, and industrial sovereignty of France and Europe, working toward a more secure and better-controlled present and future.
Located at the heart of regions equipped with major research infrastructures, CEA benefits from a wide network of academic and industrial partners in France, across Europe, and internationally.
CEA's 20,000 employees share three core values:
• A strong sense of responsibility
• Cooperation
• Curiosity
Position description
Category
Micro and nano technologies
Contract
Internship
Job title
Stage - SiGe HBT LNA for cryogenic applications
Subject
Join CEA-Leti to develop electronics operating at extremely low temperature (down to 4K andbelow!), used in quantum computing or spatial & radio-astronomy applications. This internship provides an opportunity to progress BiCMOS technology for upcoming and emerging applications, with the potential to pursue a PhD.
Contract duration (months)
6
Job description
As an intern at CEA, you will have the opportunity to work in a world-renowned research environment.
Our teams are made up of passionate and dedicated experts, providing a stimulating setting for learning and collaboration.
You will have access to cutting-edge equipment and top-tier research resources to successfully carry out your assignments.
Context
In recent years, the race to build a quantum computer has intensified, drawing widespread efforts. Such quantum computers operate at very low temperatures, well below 4K, to preserve the essential properties of quantum states. The use of conventional electronic circuits at cryogenic temperatures, in close proximity to the quantum processor, is necessary to control and detect quantum states more quickly and efficiently, while limiting the wiring to
ambient temperature instrumentation. Other emerging applications requires low–temperature operation of CMOS transistors, such as spatial applications, high performance computing, high energy physics…, with a temperature of operation below 100K.
Work expected
In this internship you will perform electrical characterization and modeling of SiGe Heterojunction Bipolar Transistors in cryogenic environment, advancing the understanding of these devices, and optimizing their potential in extreme environment.
Applicant Profile
Master student with a background in microelectronics, device physics and/or RF devices, you like experimental work and explore new domains beyond
conventional electronics. You are curious, and like working within a team in a stimulating international environment. A PhD opportunity in related topics will be open in September 2024, which you can apply for during your internship.
Position location
Site
Grenoble
Job location
France, Auvergne-Rhône-Alpes, Isère (38)
Location
Grenoble
Candidate criteria
Languages
English (Intermediate)
Prepared diploma
Bac+5 - Diplôme École d'ingénieurs
PhD opportunity
Oui
Requester
Position start date
01/02/2026
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