General information
Organisation
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
The CEA is established in ten centers spread throughout France
Reference
2025-37536
Description de l'unité
As part of a dynamic and rapidly growing team, you will work on the development of the latest generation of GaN-on-silicon devices, leveraging recent advances in microelectronics fabrication to explore the performance of advanced III-V devices in high-frequency circuits.
Position description
Category
Micro and nano technologies
Contract
Internship
Job title
Stage - Characterization and modeling of innovative RF devices
Subject
We are offering an internship for motivated students looking to specialize in advanced semiconductor device engineering. The project focuses on innovative GaN-on-silicon HEMT transistors for RF applications, with particular emphasis on high-frequency performance and noise behavior.
Contract duration (months)
6
Job description
We are offering an internship for motivated students interested in advanced semiconductor device engineering. The project focuses on innovative GaN-on-Silicon HEMTs for RF applications, with an emphasis on high-frequency performance and noise behavior.
The work will combine hands-on experimental measurements in the lab (S-parameters, noise characterization, large-signal RF analysis) with TCAD simulations to better understand device physics and performance trade-offs. By bridging experiments on state of the art equipment and advanced modeling, the candidate will contribute to the development of next-generation GaN-on-Silicon RF devices.
This internship provides the opportunity to acquire expertise in RF characterization techniques, noise modeling, and advanced TCAD tools. The student will join a multidisciplinary team and work in close collaboration with more experienced researchers.
Applicant Profile
With a background in microelectronics and/or radiofrequency, you feel confortable and enjoy your time performing delicate characterizations of new devices using the best equipment money can buy. You have strong adaptability and communication skills and you love presenting your results and dicuss with students and supervisors about how to model and interpret your measurements
Position location
Site
Grenoble
Job location
France, Auvergne-Rhône-Alpes, Isère (38)
Location
Grenoble
Candidate criteria
Languages
- French (Fluent)
- English (Intermediate)
Requester
Position start date
20/01/2026
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