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Development of vertical GaN power transistors gate module

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Vacancy details

General information

CEA (logo)

Organisation

The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France
  

Reference

2025-37527  

Position description

Category

Miscellaneous

Contract

Internship

Job title

Development of vertical GaN power transistors gate module

Subject

The work will involve studying the impact of process parameters on electrical characteristics. Special attention will be given to optimizing the gate geometry through TCAD simulations to study how its shape impacts on-state and breakdown. Identified improvements will be integrated to the devices fabricated on our 200mm GaN power devices line. The internship will take place within the power devices lab and supported by several ongoing projects.

Contract duration (months)

4-6

Job description

Embark on an exciting technological journey with CEA-Leti!

 

This internship offers a unique opportunity to enhance your skills in GaN power devices and develop cutting-edge architectures. You’ll work alongside a multidisciplinary team specializing in material engineering, characterization, device simulation, and electrical measurements, with the potential to transition into a PhD program. If you’re eager to innovate, expand your knowledge, and tackle state-of-the-art challenges, this position is a valuable addition to your career!

Vertical GaN power components are highly promising for power applications beyond the kV range and are therefore extensively studied worldwide. Transistors with a 'trench MOSFET' architecture have been demonstrated in the state-of-the-art with very encouraging results. The gate stack of these devices is a crucial element as it directly impacts their on-state resistance, threshold voltage, and the control signal to be applied in a power converter. The proposed study in this thesis will focus on developing innovative gate stacks that can withstand high gate voltages while maintaining state-of-the-art threshold voltage and channel mobility with minimal gate dielectric trapping. The work will involve studying the impact of process parameters on electrical characteristics. Special attention will be given to optimizing the gate geometry through TCAD simulations to study how its shape impacts on-state and breakdown. Identified improvements will be integrated to the devices fabricated on our 200mm GaN power devices line. The internship will take place within the power devices lab and supported by several ongoing projects.

Applicant Profile

With a solid foundation in microelectronics devices and a fervor for technological research, you are eager to learn, have excellent communication skills and like to work as part of a team. You are particularly interested in methodologies that merge device physics with the electrical characterization of new device architectures for power electronics.

 

Still hesitating? Here’s what we offer:

  • The opportunity to work within a world-renowned organization in scientific research,
  • A unique environment dedicated to ambitious projects addressing today’s major societal challenges,
  • Hands-on experience at the cutting edge of innovation, with strong potential for industrial applications,
  • Exceptional experimental facilities and high-quality supervision,
    Real career opportunities following your internship,
  • An internship at the heart of the Grenoble metropolitan area, easily accessible through sustainable mobility supported by CEA
  • 85% reimbursement of public transport costs,
  • A recognized work-life balance,
  • Access to a company restaurant,
  • A strong commitment to diversity and inclusion. 

 

 

In line with CEA’s commitment to the integration of people with disabilities, this position is open to all. CEA offers specific accommodations and/or organizational arrangements to foster the inclusion of workers with disabilities.

 

Position location

Site

Grenoble

Job location

France, Auvergne-Rhône-Alpes, Isère (38)

Location

Grenoble

Candidate criteria

Languages

English (Fluent)

Prepared diploma

Bac+5 - Master 2

PhD opportunity

Oui

Requester

Position start date

16/02/2026


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