Aluminum nitride (AlN) is an UWBG (ultra-wide bandgap) semiconductor that could potentially be used to create power components with a very high voltage rating (beyond several kV) and a very low on-state resistance, which could induce a significant reduction in heating and power converter size (energy and material savings).

One important first step is to achieve ohmic contacts on n- and p-type regions, which can be achieved through electrostatic doping developed with our partner, Stanford University. A second key step is to obtain high quality AlN-based drift layers. A third step will be to passivate the layers which we are developing in collaboration with CNRS-LTM.

The goal of the internship will be to study the electrical properties of these building blocks and consider the design of power transistors and diodes that could use them. Another aspect will involve a literature review of the different techniques used to create the involved epitaxial layers, in order to analyze their material criticality compared to other UWBG or WBG semiconductors, as well as the energy required to manufacture them.

The work will allow you to develop skills in semiconductor device physics, electrical measurements power electronics devices and their environmental impact.

With a solid foundation in microelectronics devices and a fervor for technological research, you are eager to learn, have excellent communication skills and like to work as part of an international team. You are particularly interested in methodologies that merge device physics with the electrical characterization of new device architectures for power electronics and want to participate in the development of a sustainable future.