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New Al(Ga)N templates for optimized epitaxial growth of UV LEDs H/F


Détail de l'offre

Informations générales

Entité de rattachement

Le Commissariat à l'énergie atomique et aux énergies alternatives (CEA) est un organisme public de recherche.

Acteur majeur de la recherche, du développement et de l'innovation, le CEA intervient dans le cadre de ses quatre missions :
. la défense et la sécurité
. l'énergie nucléaire (fission et fusion)
. la recherche technologique pour l'industrie
. la recherche fondamentale (sciences de la matière et sciences de la vie).

Avec ses 16000 salariés -techniciens, ingénieurs, chercheurs, et personnel en soutien à la recherche- le CEA participe à de nombreux projets de collaboration aux côtés de ses partenaires académiques et industriels.  

Référence

2020-15503  

Description du poste

Domaine

Matériaux, physique du solide

Contrat

Post-doctorat

Intitulé de l'offre

New Al(Ga)N templates for optimized epitaxial growth of UV LEDs H/F

Sujet de stage

UV-C light is very powerful purifying source with a strong ability to destroy bacteria and viruses. With efficient UV-C light emitters, millions of people could gain access to safe drinking water, and pure air and clean surfaces could greatly reduce our daily exposure to viruses like Covid-19. However, efficient UV-C light emitters do not yet exist. The current solution for UV-C light sources is Hg-based lamps, which are toxic, and also too cumbersome, expensive and inefficient to allow for these applications. Another rising technology is UV-C LEDs. UV-C LEDs are safe, nontoxic, and could have to potential to become as cheap and efficient as the now common blue, green and red LEDs. However, UV-C LEDs, which rely on the use of AlGaN nitride alloy epitaxial layers, are still not efficient enough to be considered as a possible alternative on a large industrial scale.

Durée du contrat (en mois)

12 mois (renouvelables)

Description de l'offre

EXPECTED WORK

Two of the reasons for this so far limited efficiency is the quality of the nitride material and the technology employed for fabricating the diodes. We have created an academic consortium which, around CEA-LETI, can address the different issues at stake, in order to develop a true technology stream in this field. One of the issues concerns the structural quality of the epitaxial layers, dislocations being non-radiative defects that kill the internal efficiency of the LED. Within the consortium, we are in charge of developing new and optimized template layers, i.e. the epitaxial layer nucleated on the surface of the sapphire substrate, since an important part of the defects in the LEDs arise from this nucleation layer. To address this point, we will develop new and original methods for the deposition of AlN and AlGaN templates: reactive sputtering, co-sputtering (for alloy templates) and Pulsed Laser Deposition (PLD). The layers will be characterized on the Nano-Characterization Platfom of LETI and will be evaluated according to the electro-optical properties of the LEDs structures that will be epitaxially grown on top of these templates.

The ideal candidate will hold a PhD in material science, physics, or chemistry, and ideally a working knowledge of optoelectronics, material characterization, and III-nitrides epitaxy. During this post-doc, the candidate will enjoy a state-of-the art scientific and technological environment.

Localisation du poste

Site

Grenoble

Localisation du poste

France, Auvergne-Rhône-Alpes, Isère (38)

Ville

Grenoble

Critères candidat

Langues

Anglais (Courant)

Demandeur

Disponibilité du poste

01/03/2021