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Internship - Electrical Study of the Dynamic Behavior of High-Mobility GaN Transistors (M/F)

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Vacancy details

General information

CEA (logo)

Organisation

The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas :
• defence and security,
• nuclear energy (fission and fusion),
• technological research for industry,
• fundamental research in the physical sciences and life sciences.

Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.

The CEA is established in ten centers spread throughout France
  

Reference

2025-37566  

Description de l'unité

The Characterization and Reliability Laboratory specializes in the electrical characterization of materials and devices. We primarily focus on studying materials and microelectronic technologies for CMOS, memory, quantum, and power applications.

Position description

Category

Engineering science

Contract

Internship

Job title

Internship - Electrical Study of the Dynamic Behavior of High-Mobility GaN Transistors (M/F)

Subject

The study focuses on the dynamics of on-resistance and threshold voltage in high-electron-mobility GaN transistors (HEMTs). Electrical analysis will enable us to identify improvements in the manufacturing steps to enhance the component's reliability and efficiency for more sustainable electronics.

Contract duration (months)

6 months

Job description

Description


Do you want to contribute to a research field that enables technological solutions for sustainability? Then join the power electronics community, as our research is key to reducing energy consumption and sustaining the energy transition.
This internship offers a unique opportunity to expand your knowledge in GaN High-Electron-Mobility Transistors (HEMTs), which are leading devices for reducing data center energy consumption. This is a critical challenge today, especially with the explosion of AI applications hosted in these data centers where we continue to rely on relatively inefficient silicon devices.
You will work alongside a multidisciplinary team specializing in semiconductor material engineering, device simulation, and electrical characterization. Your topic will be the study of charge carriers dynamics in order to better assess the reliability of HEMT power devices. Specifically, on-resistance and threshold voltage drifts due to charge trapping mechanisms are crucial for understanding the transistors' operation. By analyzing their electrical behavior, with the guidance of our experts, your work will enable the team to optimize the device architecture and achieve even greater efficiency.
By contributing to the development of GaN HEMTs, you will gain comprehensive knowledge in process engineering, electrical characterization, and TCAD (Technology Computer-Aided Design) simulation. If you are passionate about driving innovation, broadening your expertise, and taking on cutting-edge challenges, this role will significantly enrich your career!

Applicant Profile

Candidate Profile


With a solid foundation in physics of semiconductor devices and a fervor for technological research, you are eager to learn, and have excellent communication skills. You are particularly interested in methodologies that merge device physics with the electrical characterization of new device architectures for power electronics.

Join us, come develop your skills and acquire new ones! Still have doubts? We offer you:

  •  The opportunity to work within a world-renowned organization in the field of scientific research,
  • A unique environment dedicated to ambitious projects for the benefit of today's major societal challenges,
  • An experience at the forefront of innovation, with strong industrial development potential,
    Exceptional experimental facilities and high-quality supervision,
  • Real career opportunities upon completion of your internship,
  • A position in the heart of the Grenoble metropolitan area, easily accessible via soft mobility promoted by the CEA,
  • An 85% contribution to public transportation costs,
  • A recognized work-life balance,
    A company restaurant,
  • A diversity and inclusion policy.
     
    In accordance with the commitments made by the CEA to integrate people with disabilities, this position is open to everyone. The CEA offers accommodations and/or organizational possibilities for the inclusion of workers with disabilities.

Position location

Site

Grenoble

Job location

France, Auvergne-Rhône-Alpes, Isère (38)

Location

Grenoble

Candidate criteria

Languages

English (Fluent)

Prepared diploma

Bac+5 - Master 2

PhD opportunity

Oui

Requester

Position start date

02/02/2026


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